APTGT30H170T3G APTGT30H170T3G C rev 2 october, 2012 1-6 www.microsemi.com absolute maximum ratings these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com 1615 18 20 23 22 13 11 12 14 87 2930 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1700 v t c = 25c 45 i c continuous collector current t c = 80c 30 i cm pulsed collector current t c = 25c 70 a v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 210 w rbsoa reverse bias safe operating area t j = 125c 60a@1600v v ces = 1700v i c = 30a @ tc = 80c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt3 technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? low stray inductance ? high level of integration ? internal thermistor for temperature monitoring benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? easy paralleling due to positive tc of vcesat ? each leg can be easily paralleled to achieve a phase leg of twice the current capability ? rohs compliant full - bridge trench + field stop igbt3 power module downloaded from: http:///
APTGT30H170T3G APTGT30H170T3G C rev 2 october, 2012 2-6 www.microsemi.com all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1700v 250 a t j = 25c 2.0 2.4 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 30a t j = 125c 2.4 v v ge(th) gate threshold voltage v ge = v ce , i c = 1.5ma 5.2 5.8 6.4 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 600 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 2500 c res reverse transfer capacitance v ge = 0v, v ce = 25v f = 1mhz 90 pf t d(on) turn-on delay time 100 t r rise time 70 t d(off) turn-off delay time 650 t f fall time inductive switching (25c) v ge = 15v v bus = 900v i c = 30a r g = 18 ? 80 ns t d(on) turn-on delay time 100 t r rise time 70 t d(off) turn-off delay time 750 t f fall time 100 ns e on turn-on switching energy 17 e off turn-off switching energy inductive switching (125c) v ge = 15v v bus = 900v i c = 30a r g = 18 ? 15 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1700 v t j = 25c 250 i rm maximum reverse leakage current v r =1700v t j = 125c 500 a i f dc forward current t c =80c 50 a t j = 25c 1.8 2.2 v f diode forward voltage i f = 50a v ge = 0v t j = 125c 1.9 v t j = 25c 385 t rr reverse recovery time t j = 125c 490 ns t j = 25c 14 q rr reverse recovery charge t j = 125c 23 c t j = 25c 6 e r reverse recovery energy i f = 50a v r = 900v di/dt =800a/s t j = 125c 12 mj temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ?? ? ?? ? ? ?? ? ? ?? ? ? ? t t b r r t 1 1 exp 25 85/25 25 t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTGT30H170T3G APTGT30H170T3G C rev 2 october, 2012 3-6 www.microsemi.com thermal and package characteristics symbol characteristic min typ max unit igbt 0.6 r thjc junction to case thermal resistance diode 0.7 c/w v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2 3 n.m wt package weight 110 g sp3 package outline (dimensions in mm) see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com downloaded from: http:///
APTGT30H170T3G APTGT30H170T3G C rev 2 october, 2012 4-6 www.microsemi.com typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 10 20 30 40 50 60 00.511.522.533.54 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 10 20 30 40 50 60 012345 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 10 20 30 40 50 60 567891 01 1 v ge (v) i c (a) energy losses vs collector current eon eoff er 0 5 10 15 20 25 30 35 40 0 2 04 06 08 01 0 0 i c (a) e (mj) v ce = 900v v ge = 15v r g = 18 ? t j = 125c eon eoff er 0 20 40 60 80 0 20 40 60 80 100 120 gate resistance (ohms) e (mj) v ce = 900v v ge =15v i c = 30a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 10 20 30 40 50 60 70 0 400 800 1200 1600 v ce (v) i c (a) v ge =15v t j =125c r g =18 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt downloaded from: http:///
APTGT30H170T3G APTGT30H170T3G C rev 2 october, 2012 5-6 www.microsemi.com forward characteristic of diode t j =25c t j =125c t j =125c 0 20 40 60 80 100 00.511.522.53 v f (v) i f (a) hard switching zcs zvs 0 5 10 15 20 25 30 35 40 45 0 102030405060 i c (a) fmax, operating frequency (khz) v ce =900v d=50% r g =18 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode downloaded from: http:///
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